Characterization of the interfaces formed during the silicidation process of Ti films on Si at low and high temperatures

Surface and Interface Analysis

Volumn 25, Issue 11, 1997, Pages 896-903

  Perez Rigueiro J ^a   Herrero, P ^b   Jimenez C ^a   Perez Casero R ^a   Martinez Duart J M ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

Interface; Rapid thermal annealing; Schottky barrier; Silicidation; Titanium silicide

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SILICON; THERMAL EFFECTS; TITANIUM; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GRAZING INCIDENCE X RAY DIFFRACTION; SILICIDATION; TITANIUM SILICIDE;

METALLIC FILMS;

EID: 0031245015     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199710)25:11<896::AID-SIA315>3.0.CO;2-4     Document Type: Article

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