Nitridation of TiSi2 thin films by rapid thermal processing

Surface and Coatings Technology

Volumn 80, Issue 1-2, 1996, Pages 72-75

  Perez Rigueiro J ^a   Jimenez C ^a   Vazquez L ^b   Perez Casero R ^a   Martinez Duart J M ^a,b  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

Precursor layer; Rapid thermal annealing; Thin films; TiN films

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONTACTS; ELECTRIC VARIABLES MEASUREMENT; FILM PREPARATION; HEAT TREATMENT; INTERFACES (MATERIALS); NITROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SURFACES; TITANIUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

CRYSTALLOGRAPHIC PHASES; DIFFUSION BARRIER; NITRIDATION; NUCLEAR REACTION ANALYSIS; PRECURSOR LAYER; RAPID THERMAL PROCESSING; TITANIUM SILICIDE;

THIN FILMS;

EID: 0030105951     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/0257-8972(95)02688-6     Document Type: Article

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