Biexponential intersubband relaxation in n-modulation-doped quantum-well structures

Superlattices and Microstructures

Volumn 19, Issue 1, 1996, Pages 9-16

  Baier, J ^b   Bayanov, I M ^a,b   Plodereder U ^b   Seilmeier, A ^b  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b UNIVERSITY OF BAYREUTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; LIGHT MODULATION; LIGHT SCATTERING; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TEMPERATURE;

BARRIER TRANSFER PROCESSES; BIEXPONENTIAL INTERSUBBAND RELAXATION; INTERSUBBAND SCATTERING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029753909     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0002     Document Type: Article

References (20)

1. B. F. Levine, J. Appl. Phys. 74, R1 (1993).
2. J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson and A. Y. Cho, Science 264, 553 (1994).
3. R. Ferreira and G. Bastard, Phys. Rev. B 40, 1074 (1989).
4. B. K. Ridley, in: Quantum Well Intersubband Transition Physics and Devices, eds H. C. Liu, B. F. Levine, J. Y. Andersson, Kluwer, Dordrecht: p. 443 (1994).
5. M. C. Tatham, J. F. Ryan and C. T. Foxon, Phys. Rev. Lett. 63, 1637 (1989).
6. B. N. Murdin, G. M. H. Knippels, A. F. G. van der Meer, C. R. Pidgeon, C. J. G. M. Langerak, M. Helm, W. Heiss, K. Unterrainer, E. Gornik, K. K. Geerinck, N. J. Hovenier and W. T. Wenckebach, Semicond. Sci. Technol. 9, 1554 (1994).
7. J. Y. Duboz, E. Costard, E. Rosencher, P. Bois, J. Nagle, J. M. Berset, D. Jaroszynski and J. M. Ortega, J. Appl. Phys. 77, 6492 (1995).
8. J. Faist, F. Capasso, C. Sirtori, D. L. Sivco, A. L. Hutchinson, S. N. G. Chu and A. Y. Cho, Appl. Phys. Lett. 63, 1354 (1993).
9. P. Vagos, P. Boucaud, F. H. Julien, J.-M. Lourtioz and R. Planel, Phys. Rev. Lett. 70, 1018 (1993).
10. S. Hunsche, K. Leo, H. Kurz and K. Köhler, Phys. Rev. B 50, 5791 (1994).
11. U. Plödereder, T. Dahinten, A. Seilmeier and G. Weimann, in: Intersubband Transitions in Quantum Wells, eds E. Rosencher et al., Plenum, New York: p. 309 (1992).
12. A. Seilmeier, U. Plödereder, J. Baier and G. Weimann, in: Quantum Well Intersubband Transition Physics and Devices, eds H. C. Liu, B. F. Levine, J. Y. Andersson, Kluwer, Dordrecht: p. 421 (1994).
13. A. Seilmeier, H. J. Hübner, G. Abstreiter, G. Weimann and W. Schlapp, Phys. Rev. Lett. 59, 1345 (1987).
14. T. Dahinten, U. Plödereder, A. Seilmeier, K. L. Vodopyanov, K. R. Allakhverdiev and Z. A. Ibragimov, IEEE J. Quantum Electron. 29, 2245 (1993).
15. M. Altarelli, in: Interfaces, Quantum Wells, and Superlattices, eds C. R. Leavens et al., Plenum, New York: p. 43 (1988).
16. G. Margaritondo and P. Perfetti, in: Heterojunction and Band Discontinuities: Physics and Device Applications, eds F. Capasso et al., North Holland, Amsterdam: p. 59 (1987).
17. S. R. Smith, F. Szmulowicz and G. J. Brown, J. Appl. Phys. 75, 1010 (1994).
18. L. Hedin and B. I. Lundqvist, J. Phys. C 4, 2064 (1971).
19. S. M. Goodnick and J. E. Lary, Semicond. Sci. Technol. 7, B 109 (1992).
20. J. L. Educato, D. W. Bailey, A. Sugg, K. Hess and J. P. Leburton, Solid State Electron. 32, 1615 (1989).