Self-consistent modeling of the current-voltage characteristics of resonant tunneling structures with type II heterojunctions

Journal of Applied Physics

Volumn 82, Issue 5, 1997, Pages 2421-2426

  Lapushkin, I ^a   Zakharova, A ^a   Gergel, V ^a   Goronkin, H ^b   Tehrani, S ^b  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b Phoenix Corporation Research Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CURRENT DENSITY; FERMI LEVEL; HETEROJUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM ANTIMONIDE; CHARGE DENSITY; GALLIUM ANTIMONIDE; INDIUM ARSENIDE; RESONANT TUNNELING STRUCTURES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 0031238259     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366261     Document Type: Article

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