Self-consistent calculation of current-voltage characteristics of resonant tunnelling structures with type II heterojunctions

Solid-State Electronics

Volumn 39, Issue 10, 1996, Pages 1445-1448

  Gergel, V ^a   Lapushkin, I ^a   Zakharova, A ^a  

^a MOSCOW INSTITUTE OF PHYSICS AND TECHNOLOGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; HETEROJUNCTIONS; MATHEMATICAL MODELS; PROBABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

BAND BENDING; KANE MODEL; RESONANT TUNNELING STRUCTURES; SELF CONSISTENT CALCULATION; TRANSFER HAMILTONIAN APPROACH; TRANSFER MATRIX METHOD;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030269371     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00063-9     Document Type: Review

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