Wavelength-dependent optimum output coupling enhances performance of external-cavity-tuned semiconductor lasers at 1.5 μm

IEEE Journal of Quantum Electronics

Volumn 32, Issue 10, 1996, Pages 1777-1781

  Fouquet, Julie E ^a,b,d,e,f   Braun, David M ^c,g,h   Trott, Gary R ^a,b,c,i  

^a IEEE

^b HEWLETT PACKARD LABORATORIES   (United States)

^c HEWLETT PACKARD COMPANY   (United States)

^d HARVARD UNIVERSITY   (United States)

^e STANFORD UNIVERSITY   (United States)

^f Commun and Opt Research Laboratory ^*

^g UNIVERSITY OF WISCONSIN   (United States)

^h Hewlett Packard ^*

ⁱ IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; ANTIREFLECTION COATINGS; CAVITY RESONATORS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; GAIN MEASUREMENT; LASER THEORY; LASER TUNING; MATHEMATICAL MODELS; PERFORMANCE;

EXTERNAL CAVITY TUNED LASER; REFLECTIVITY; SEMICONDUCTOR GAIN; WAVELENGTH DEPENDENCE;

SEMICONDUCTOR LASERS;

EID: 0030269777     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.538784     Document Type: Article

References (5)

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3. S. D. Smith, "Design of multilayer fiiters by considering two effective interfaces," J. Opt. Soc. Amer., vol, 48, no. 1, pp. 43-50, Jan. 1958.
4. Y. Sakakibara, H. Higuchi, E. Oomua, Y. Nakajima, K. Goto, H. Namizaki, K. Ikeda, and W. Susaki, "High-power 1.3-μm InGaAsP P-substrate buired crescent lasers," J. Lightwave Technol., vol. LT-3, pp. 978-983, 1985.
5. D. M. Braun and R. L. Jungerman, "Broadband multilayer antireflection coating for semiconductor laser facets," Opt. Lett., vol. 20, pp. 1154-1156, 1995.