Influence of strain and repeated annealing on interface mixing in annealed CdTe/CdMnTe quantum wells

Solid State Communications

Volumn 103, Issue 11, 1997, Pages 619-622

  Kossacki, P ^a   The Khoi, Nguyen ^a   Gaj, J A ^a   Kutrowski, M ^b   Surma, M ^b   Karczewski, G ^b   Wojtowicz, T ^b   Guziewicz, M ^c  

^a UNIVERSITY OF WARSAW   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

^c Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

A. quantum wells; E. light absorption and reflection; E. luminescence

Indexed keywords

ANNEALING; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); LATTICE CONSTANTS; LIGHT ABSORPTION; LIGHT REFLECTION; LUMINESCENCE; MAGNETOOPTICAL EFFECTS; MANGANESE; SEMICONDUCTING CADMIUM COMPOUNDS; STRAIN;

INTERFACE MIXING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031235566     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00263-9     Document Type: Article

References (4)

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2. Kossacki, P., The Khoi, Nguyen, Gaj, J.A., Karczewski, G., Wojtowicz, T., Janik, E., Zakrzewski, A., Kutrowski, M. and Kossut, J., Superlattices and Microstructures, 16, 1994, 63.
3. Maheswaranathan, Sladek, R.J. and Debska, U., Phys. Rev., B31, 1985, 5212.
4. Barcz, A., Karczewski, G., Wojtowicz, T. and Kossut, J., J. Cryst. Growth, 159, 1996, 980.