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Volumn 18, Issue 5, 1977, Pages 423-454

An introduction to silicon inversion layers

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84916031499     PISSN: 00107514     EISSN: 13665812     Source Type: Journal    
DOI: 10.1080/00107517708231501     Document Type: Article
Times cited : (10)

References (44)
  • 24
    • 0004032707 scopus 로고
    • (London: Taylor and Francis). Mott, N. F., 1977, J. Glass Techn. (to be published)x
    • Mott, N. F., 1974, Metal-Insulator Transitions (London: Taylor and Francis). Mott, N. F., 1977, J. Glass Techn. (to be published).
    • (1974) Metal-Insulator Transitions
    • Mott, N.F.1
  • 31
    • 84947853206 scopus 로고
    • Thesis, Cambridge
    • Pollitt, S., 1976, Thesis, Cambridge.
    • (1976)
    • Pollitt, S.1
  • 34
    • 0003788671 scopus 로고
    • ed. R. H. Kingston (Philadelphia: University of Pennsylvania Press
    • Schrieffer, J. R., 1957, Semiconductor Surface Physics, ed. R. H. Kingston (Philadelphia: University of Pennsylvania Press), p. 55.
    • (1957) Semiconductor Surface Physics
    • Schrieffer, J.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.