Pseudomorphic power HEMT with 53.5% power-added efficiency for 1.9-GHz PHS standards

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1996, Pages 547-550

  Ono, Hideyuki ^a   Umemoto, Yasunari ^a   Mori, Mitsuhiro ^a   Miyazaki, Masaru ^a   Terano, Akihisa ^a   Kudo, Makoto ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ENERGY EFFICIENCY; GATES (TRANSISTOR); LITHOGRAPHY; OPTIMIZATION; PERFORMANCE; PHASE SHIFT; POWER AMPLIFIERS; TELEPHONE SYSTEMS; TRANSCONDUCTANCE;

LINEAR AMPLIFIERS; LINEARITY; LOAD IMPEDANCE; LOW IDLING CURRENT OPERATION; PERSONAL HANDY PHONE SYSTEM; POWER ADDED EFFICIENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029710298     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)