Annealing of radiation defects in dual-implanted silicon

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 722-725

  Kozlov, I P ^a   Odzhaev, V B ^a   Popok, V N ^a   Hnatowicz, V ^b  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b NUCLEAR PHYSICS INSTITUTE   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; ARGON; BORON; CRYSTAL DEFECTS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; IONS; NITROGEN; PARAMAGNETIC RESONANCE; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

DEFECT ANNEALING; DUAL IMPLANTED SILICON; PENTAVACANCIES; RADIATION DEFECTS;

SEMICONDUCTING SILICON;

EID: 0030143127     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/012     Document Type: Article

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