Selective growth conditions of ZnSe/ZnS heterostructures on (001) GaAs with metalorganic molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 8, 1997, Pages 5044-5049

  Ueta, Akio ^a   Suemune, Ikuo ^a   Uesugi, Katsuhiro ^a   Arita, Munetaka ^a   Avramescu, Adrian ^a   Numai, Takahiro ^a   Machida, Hideaki ^b   Shimoyama, Norio ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b Trichemical Laboratory   (Japan)

Author keywords

GaAs; MOMBE; Selective growth; SiOx; ZnS; ZnSe

Indexed keywords

METALLORGANIC MOLECULAR BEAM EPITAXY (MOMBE); SELECTIVE GROWTH;

DESORPTION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031213238     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.5044     Document Type: Article

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