Feasibility of fabricating a modified volcano-shaped field emitter

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 8, 1997, Pages 5275-5279

  Yang, Su Hua ^a,b   Yokoyama, Meiso ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

Author keywords

Emission current density; Field emission array; Gated volcano field emission array; Onset voltage; Self aligned technology

Indexed keywords

MODIFIED VOLCANO SHAPED FIELD EMISSION ARRAYS (MVSFEA); SELF ALIGNED TECHNOLOGY;

CURRENT DENSITY; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); MASKS; SEMICONDUCTOR DEVICE MANUFACTURE;

FIELD EMISSION CATHODES;

EID: 0031212812     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.5275     Document Type: Article

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