Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses

Semiconductor Science and Technology

Volumn 11, Issue 10, 1996, Pages 1381-1387

  Lou, C L ^a   Chim, W K ^a   Chan, D S H ^a   Pan, Y ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; ELECTRIC CHARGE; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTING SILICON; SUBSTRATES; TRANSCONDUCTANCE; TUNGSTEN COMPOUNDS;

CHARGE PUMPING; CURRENT STRESSES; ELECTRON TRAP DENSITY; ELECTRON TRAPPING; LINEAR DRAIN CURRENT; POLYSILICON; THRESHOLD VOLTAGE; TUNGSTEN POLYCIDE;

MOSFET DEVICES;

EID: 0030263262     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/10/005     Document Type: Article

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