Electronic and optical properties of periodically Si δ-doped InP grown by low pressure metalorganic vapor phase epitaxy

Journal of Applied Physics

Volumn 82, Issue 4, 1997, Pages 1700-1705

  Souza, P L ^a   Yavich, B ^a,c   Pamplona Pires, M ^a   Henriques, A B ^b   Goncalves L C D ^b  

^a PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES;

BROAD BAND EMISSION; ELECTRONIC WAVEFUNCTION; PERIODIC STRUCTURES;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031212326     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365946     Document Type: Article

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