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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 8, 1997, Pages 5175-5178

Dielectric properties of SrTiO3 capacitor using TiN bottom electrode and effects of SrTiO3 film thickness

(3) Abe, Yoshio a Kawamura, Midori a Sasaki, Katsutaka a

a KITAMI INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Capacitance; Electrode material of DRAM capacitor; Leakage current; Oxidation of TiN; rf magnetron sputtering; SrTiO3 film

Indexed keywords

TITANIUM NITRIDE BOTTOM ELECTRODES;

CAPACITANCE; DIELECTRIC FILMS; ELECTRODES; FILM PREPARATION; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; OXIDATION; PERMITTIVITY; STRONTIUM COMPOUNDS; TITANIUM NITRIDE;

CAPACITORS;

EID: 0031211988 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.5175 Document Type: Article

Times cited : (9)

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