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Volumn 9, Issue 8, 1997, Pages 1084-1086

Low-cost 1.55-μm InGaAsP-InP spot size converted (SSC) laser with conventional active layers

Author keywords

Integrated optics; Optical couplers; Semiconductor junction lasers

Indexed keywords

INTEGRATED OPTICS; LASER BEAMS; OPTICAL FIBER COUPLING; OPTICAL WAVEGUIDES; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

EID: 0031211656     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.605508     Document Type: Article
Times cited : (28)

References (8)
  • 3
    • 0029277284 scopus 로고
    • Output beam characteristics of 1.3 μm GaInAsP/InP SL-QW lasers with narrow and circular output beam
    • A. Kasukawa, N. Iwai, N. Yamanaka and N. Yokouchi, "Output beam characteristics of 1.3 μm GaInAsP/InP SL-QW lasers with narrow and circular output beam." Electron. Lett., vol. 31, pp. 559-560, 1995.
    • (1995) Electron. Lett. , vol.31 , pp. 559-560
    • Kasukawa, A.1    Iwai, N.2    Yamanaka, N.3    Yokouchi, N.4
  • 4
    • 0027927106 scopus 로고
    • Tapered active stripe for 1.55-μm InGaAsP/InP strained multiple quantum well lasers with reduced beam divergence
    • P. Doussiere, P. Garabedian, C. Graver, E. Derouin, E. Gaumont-Goarin, G. Michaud, and R. Meilleur, "Tapered active stripe for 1.55-μm InGaAsP/InP strained multiple quantum well lasers with reduced beam divergence," Appl. Phys. Lett., vol. 64, pp. 539-541, 1994.
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 539-541
    • Doussiere, P.1    Garabedian, P.2    Graver, C.3    Derouin, E.4    Gaumont-Goarin, E.5    Michaud, G.6    Meilleur, R.7
  • 5
    • 0028515409 scopus 로고
    • In-GaAsP/InP tapered active layer multiquantum well laser with 1.8 dB coupling loss to cleaved singlemode fiber
    • I. F. Lealman, L. F. Rivers, M. J. Harlow, and S. D. Perrin, "In-GaAsP/InP tapered active layer multiquantum well laser with 1.8 dB coupling loss to cleaved singlemode fiber," Electron. Lett., vol. 30, pp. 1685-1687, 1994.
    • (1994) Electron. Lett. , vol.30 , pp. 1685-1687
    • Lealman, I.F.1    Rivers, L.F.2    Harlow, M.J.3    Perrin, S.D.4
  • 7
    • 3943112750 scopus 로고
    • BPM simulator for active and passive semiconductor IOC
    • G. Perrone, D. Petazzi, A. Gulisano, and I. Montrosset, "BPM simulator for active and passive semiconductor IOC," in SPIE, 1994, vol. 2150, pp. 148-155.
    • (1994) SPIE , vol.2150 , pp. 148-155
    • Perrone, G.1    Petazzi, D.2    Gulisano, A.3    Montrosset, I.4
  • 8
    • 0030173885 scopus 로고    scopus 로고
    • High-resolution depth monitoring of reactive ion etching of InP/InGaAs(P) MQW's using reflectance measurements
    • A. Stano, C. Coriasso, and G. Meneghini, "High-resolution depth monitoring of reactive ion etching of InP/InGaAs(P) MQW's using reflectance measurements," Semiconduct. Sci. Technol., vol. 11, pp. 968-973, 1996.
    • (1996) Semiconduct. Sci. Technol. , vol.11 , pp. 968-973
    • Stano, A.1    Coriasso, C.2    Meneghini, G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.