A model noise temperature for nonlinear transport in semiconductors

Journal of Applied Physics

Volumn 80, Issue 9, 1996, Pages 5067-5075

  Varani, L ^a   Houlet, P ^a   Vaissiere J C ^a   Nougier, J P ^a   Starikov, E ^b   Gruzhinskis, V ^b   Shiktorov, P ^b   Reggiani, L ^c   Hlou, L ^d  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b LITHUANIAN ACADEMY OF SCIENCES   (Lithuania)

^c UNIVERSITY OF SALENTO   (Italy)

^d IBN TOFAIL UNIVERSITY   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC FIELD EFFECTS; FOURIER TRANSFORMS; HOT CARRIERS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; TEMPERATURE; VELOCITY;

DIFFERENTIAL MOBILITY; LINEAR RESPONSE THEORY; NOISE TEMPERATURE; SPECTRAL DENSITY; VELOCITY ENERGY FLUCTUATIONS;

SPURIOUS SIGNAL NOISE;

EID: 0030286421     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363485     Document Type: Article

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