A study of the non-parabolic hydrodynamic modelling of a sub-micrometre n+-n-n+ device

Journal of Physics D: Applied Physics

Volumn 30, Issue 16, 1997, Pages 2343-2353

  Cheng, Ming C ^a   Guo, Liangying ^a,b   Fithen, Robert M ^a   Luo, Yansheng ^a  

^a UNO College of Engineering   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSPORT PROPERTIES; HEAT FLUX; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

FOURIER LAW; MASS FLUX; NON PARABOLIC HYDRODYNAMIC MODELLING;

SEMICONDUCTOR DEVICES;

EID: 0031208276     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/30/16/013     Document Type: Article

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