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Volumn 39, Issue 5, 1996, Pages 731-735

Non-equilibrium carrier transport in the base of heterojunction bipolar transistors

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; PROBABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TEMPERATURE; THERMOELECTRICITY;

EID: 0030151203     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00159-X     Document Type: Article
Times cited : (7)

References (10)
  • 3
    • 85029999638 scopus 로고    scopus 로고
    • U.S. Patent, No. 4,672,404 (9 June 1987)
    • D. G. Ankri, L. F. Eastman and W. H. Ku, U.S. Patent, No. 4,672,404 (9 June 1987).
    • Ankri, D.G.1    Eastman, L.F.2    Ku, W.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.