β-SiC photodiodes prepared on silicon substrates by rapid thermal chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 8, 1997, Pages 5151-5155

  Wu, Kuen Hsien ^a   Fang, Yean Kuen ^a   Zhou, Jing Hong ^a   Ho, Jyh Jier ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

High temperature operation; Photodiode; RTCVD; Si substrate; SiC

Indexed keywords

RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD);

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SUBSTRATES;

PHOTODIODES;

EID: 0031207388     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.5151     Document Type: Article

References (18)

1. K. Shibahara, S. Nishino and H. Matsunami: Jpn. J. Appl. Phys. 23 (1984) L862.
2. K. Furukawa, A. Uemoto, M. Shigeta, A. Suzuki and S. Nakajima: Appl. Phys. Lett. 48 (1986) 1536.
3. Y. Kondo, T. Takahashi, K. Ishii, Yutaka Hayashi, E. Sakuma, S. Misawa, H. Daimon, M. Yamanaka and S. Yoshida: IEEE Electron Device Lett. 7 (1986) 404.
4. K. Furukawa, A. Hatano, A Uemoto, Y. Fujii, K. Nakanishi, M. Shigeta, A. Suzuki and S. Nakajima: IEEE Electron Device Lett. 8 (1987) 48.
5. T. Sugii, T. Ito, Y. Furumura, M. Doki, F. Mieno and M. Maeda: IEEE Electron Device Lett. 9 (1988) 87.
6. P. Glasow, G. Ziegler, W. Suttrop, G. Pensl and R. Helbig: Proc. SPIE 868 (1987) 40.
7. R. B. Campbell and H. C. Chang: Solid-State Electron. 10 (1967) 949.
8. D. M. Brown, E. T. Downey, M. Ghezzo, J. W. Kretchmer, R. J. Saia, Y. S. Liu, J. A. Edmond, G. Gati, J. M. Pimbly and W. E. Schneider: IEEE Trans. Electron Devices 40 (1993) 325.
9. L. Hoffmann, G. Ziegler, D. Theis and C. Weyrich: J. Appl. Phys. 53 (1982) 6962.
10. K. H. Wu, Y. K. Fang, J. Y. Fang and J. D. Hwang: Jpn. J. Appl. Phys. 35 (1996) 3868.
11. J. A. Edmond, J. Ryu, J. T. Glass and R. F. Davis: J. Electrochem. Soc. 135 (1988) 359.
12. S. B. Hwang, Y. K. Fang, K. H. Chen, C. R. Liu, J. D. Hwang and M. H. Chou: IEEE Trans. Electron Devices 40 (1993) 721.
13. J. D. Hwang, Y. K. Fang and Y. J. Song: Thin Solid Films 283 (1996) 8.
14. G. L. Harris: Properties of Silicon Carbide (INSPEC, Institution of Electrical Engineers, London, 1995).
15. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed., Chap. 13, p. 749.
16. C. Y. Chang, B. S. Wu, Y. K. Fang and R. H. Lee: IEEE Electron Device Lett. 6 (1985) 149.
17. K. C. Chang, C. Y. Chang, Y. K. Fang and S. C. Jow: IEEE Electron Device Lett. 8 (1987) 64.
18. D. Wood: Optoelectronic Semiconductor Devices (Prentice Hall, Englewood Cliffs, 1994) Chap. 7, p. 345.