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Volumn 41, Issue 8, 1997, Pages 1083-1087
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Performance dependence of large-area silicon p-i-n photodetectors upon epitaxial thickness
a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
BANDWIDTH;
CAPACITANCE;
ELECTRIC CURRENTS;
PHOTODIODES;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
SILICON WAFERS;
DARK CURRENTS;
EPITAXIAL LAYERS;
PHOTODETECTORS;
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EID: 0031206732
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1101(97)00057-9 Document Type: Article |
Times cited : (10)
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References (6)
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