Advanced MERIE technology for high-volume 0.25-μm generation critical dielectric etch

Solid State Technology

Volumn 40, Issue 8, 1997, Pages 93-99

  Lindley, Roger ^a,b,c,d   Bjorkman, Claes ^a,e,f,g   Shan, Hongching ^a,h,i   Pu, Bryan ^a,j   Doan, Kenny ^a,k   Wang, Zhuxu ^a,k,l,m  

^a APPLIED MATERIALS INC   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d Dielectric Etch Technol Grp A   (United States)

^e NORTH CAROLINA STATE UNIVERSITY   (United States)

^f ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^g Res Ctr Intgd Syst in Hiroshima   (Japan)

^h SHANGHAI JIAO TONG UNIVERSITY   (China)

ⁱ STANFORD UNIVERSITY   (United States)

^j UNIVERSITY OF CALIFORNIA   (United States)

^k Dielectric Etch Technol Grp A   (United States)

^l Dalian Technological Institute   (China)

^m SAN JOSE STATE UNIVERSITY   (United States)

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Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; MAGNETIC FIELD EFFECTS; PLASMAS;

MAGNETICALLY ENHANCED REACTIVE ION ETCHER (MERIE);

REACTIVE ION ETCHING;

EID: 0031195928     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (5)

1. H. Shan et al., "M.P.: A New Dielectric Etcher with Enabling Technology. High Productivity, and Low Cost of Consumables," J. Vac. Sci. Technol. B, Vol. 14, No. 2, 1996.
2. C.H. Bjortman et al., "Damage Evaluation of MARIE Using Surface Potential Measurements," Applied Materials internal paper, 1996.
3. C.H. Bjortman, S. Ma, H. Shan, J. P. McVirtie, unpublished results of ongoing study.
4. Customer-proprietary test structures consist of a large conductive pad over a thin nitride film, over a thinner oxide film.
5. Y. Kawamoto, Extended Abstracts of the 17th Conference on Solid State Devices and Materials, p. 333, 1995.