Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition

Solid-State Electronics

Volumn 41, Issue 7, 1997, Pages 1051-1055

  Morfouli, P ^a   Ghibaudo, G ^a   Vogel, E M ^b   Hill, W L ^b   Misra, V ^b   McLarty, P K ^b   Wortman, J J ^b  

^a Grenoble INP Phelma   (France)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; MOSFET DEVICES; NITRIDING; SILICON NITRIDE; ULTRATHIN FILMS;

FOWLER NORDHEIM STRESSES; LOW PRESSURE RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

DIELECTRIC FILMS;

EID: 0031191770     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00019-1     Document Type: Article

References (13)

1. Hori, T., Iwasaki, H. and Tsuji, K., IEEE Trans. Electron. Devices, 1989, ED-36, 340.
2. Fududa, H., Yasuda, M., Iwabuchi, T. and Ohno, S., IEEE Elec. Dev. Lett., 1991, EDL-12, 587.
3. Wu, Y. L. and Hwu, J. G., IEEE Elec. Dev. Lett., 1993, EDL-14, 1.
4. Cable, J. S., Mann, R. A. and Woo, J. C. S., IEEE Elec. Dev. Lett., 1991, EDL-12, 128.
5. Ahn, J., Joshi, A., Lo, G. Q. and Kwong, D. L., IEEE Elec. Dev. Lett., 1992, EDL-13, 513.
6. Ma, Z. J., Liu, Z. H., Cheng, Y. C., Ko, P. K. and Hu, C., IEEE Trans. Electron. Devices, 1994, EDL-41, 2205.
7. Xu, X., McLarty, P., Brush, H., Misra, V. and Wortman, J. J., J. Electrochem. Soc., 1993, 140, 2960.
8. Ghibaudo, G., Roux, O., Nguyen-Duc, Ch., Balestra, F. and Brini, J., Phys. Stat. Sol. (A), 1991, 124, 571.
9. Sun, S. C. and Plummer, J. D. IEEE Trans. Electron Devices, 1980, ED-27, 1497.
10. Emrani, A., Balestra, F. and Ghibaudo, G., Solid State Electron, 1994, 37, 1967.
11. Papadas, C., Ghibaudo, G., Pio, F., Montserie, C., Pananakakis, G., Mortini, P. and Riva, C., Solid State Electronics, 1994, 37, 495.
12. Bruglers, J. and Jespers, P., IEEE Trans. Electron Devices, 1968, ED-16, 297.
13. Hill, W., Vogel, E., Misra, V., McLarty, P. and Wortman, J. J., IEEE Trans. on Electron Devices, 1996, ED-43, 15.