The effective masses in strained InGaAs/InP quantum wells deduced from magnetoexcitation spectroscopy

Applied Physics Letters

Volumn 71, Issue 4, 1997, Pages 503-505

  Dalfors, J ^a   Lundstrom T ^a   Holtz, P O ^a   Radamson, H H ^a   Monemar, B ^a   Wallin, J ^b   Landgren, G ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; MAGNETOOPTICAL EFFECTS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN;

LANDAU LEVELS; LIGHT HOLE STATE; MAGNETOEXCITATION SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031191377     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119591     Document Type: Article

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