Structural transformation of hydrogen-adsorbed Si(111)-√3 × √3 -Ag surfaces induced by electron-stimulated desorption

Surface Science

Volumn 383, Issue 1, 1997, Pages 95-102

  Watanabe, Heiji ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

Auger electron spectroscopy; Electron stimulated desorption; Reflection electron microscopy; Reflection high energy electron diffraction; Scanning electron microscopy; Silicon; Silver; Surface structure

Indexed keywords

ADSORPTION; ANNEALING; ATOMS; AUGER ELECTRON SPECTROSCOPY; DESORPTION; DIFFUSION; HYDROGEN; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

COMBINED SURFACE ANALYSIS; ELECTRON STIMULATED DESORPTION; SCANNING REFLECTION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM SCANNING ELECTRON MICROSCOPY;

SURFACES;

EID: 0031191122     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00145-3     Document Type: Article

References (10)

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10. The ESD yield has been estimated from previous time-of-flight ESD studies performed in the low-energy region below 1 keV (for example Ref. [6]). Considering the presence of neutral species and the efficiency of the experimental apparatus, a higher ESD yield is expected. Since it is well known that the ESD yield decreases as the incident electron energy increases, previous estimates of the ESD yield cannot be directly applied to our experiment. However, when electrons are irradiated onto surfaces at a low-incident angle, an energy deposit is localized near the surface. For example, highly-sensitive AES measurement can be performed with a low-incident angle probe beam [9]. Therefore, we believe that ESD is also significantly enhanced under our experimental conditions.