Modelling implications of recent silicon bandgap narrowing expressions

Progress in Photovoltaics: Research and Applications

Volumn 5, Issue 4, 1997, Pages 261-263

  Green, Martin A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE DOPING DENSITY;

CARRIER CONCENTRATION; ELECTRIC FIELDS; ENERGY GAP; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SURFACE STRUCTURE;

SILICON SOLAR CELLS;

EID: 0031190506     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1099-159x(199707/08)5:4<261::aid-pip176>3.0.co;2-j     Document Type: Article

References (15)

1. R. J. Van Overstraeten, H. J. De Man and R. P. Mertens, 'Transport equations in heavy doped silicon', IEEE Trans. Electron Devices, ED-20, 290-298 (1973).
2. J. W. Slootboom and H. C. de Graaff, 'Measurement of bandgap narrowing in silicon bipolar transistors', Solid-State Electron., 19, 857-863 (1976).
3. J. R. Hauser and P. M. Dunbar, 'Performance limitation of silicon solar cells', IEEE Trans. Electron Devices, ED-24, 305-321 (1977).
4. H. P. D. Lanyon and R. C. Tuft, 'Bandgap narrowing in moderately to heavily doped silicon', IEEE Trans. Electron Devices, ED-26, 1014-1018 (1979).
5. H. S. Bennett and C. L. Wilson, 'Statistical comparisons of data on bandgap narrowing in heavily doped silicon', J. Appl. Phys., 55, 3582-3587 (1984).
6. J. del Alamo, S. Swirhun and R. M. Swanson, 'Measuring and modeling minority carrier transport in heavily doped silicon', Solid-State Electron., 28, 47-54 (1985).
7. D. B. M. Klaassen, J. W. Slotboom and H. C. de Graaff, 'Unified apparent bandgap narrowing in n- and p-type silicon', Solid-State Electron., 35, 125-129 (1992).
8. A. Cuevas, P. A. Basore, G. Giroult-Matlakowski and C. Dubois, 'Surface recombination velocity of highly doped n-type silicon', J. Appl. Phys., 80, 3370-3375 (1996).
9. S. A. Edmiston, A. B. Sproul, M. A. Green and S. R. Wenham, 'Modelling of thin-film crystalline silicon parallel multijunction solar cells', Prog. Photovolt. Res. Appl., 3, 333-350 (1995).
10. M. J. Stocks, A. Cuevas and A. W. Blakers, 'Theoretical comparison of conventional and multilayer thin silicon solar cells', Prog. Photovolt. Res. Appl., 4, 35-54 (1996).
11. P. A. Basore and D. Clugston, 'PC1D version 4 for windows: from analysis to design', Conf. Rec. 25th IEEE Photovoltaic Specialists Conference, Washington, 1996, pp. 377-381.
12. M. A. Green, Silicon Solar Cells: Advanced Principles and Practice, pp. 172-181 and Appendix E. Bridge Printery, Sydney, 1995.
13. 2 interface', Solid State Electron., 24, 135-139 (1981).
14. R. R. King, R. A. Sinton and R. M. Swanson, 'Studies of diffused phosphorus emitters: saturation current, surface recombination velocity and quantum efficiency', IEEE Trans. Electron Devices, 37, 365 (1990).
15. J. Zhao, A. Wang and M. A. Green, 'Emitter design for high-efficiency silicon solar cells. Part 1: Terrestrial cells', Prog. Photovolt. Res. Appl., 1, 193-202 (1993).