Hydride vapor phase epitaxy of InxGa1-xN thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 A, 1997, Pages 4295-4296

  Sato, Yuichi ^a   Sato, Susumu ^a  

^a AKITA UNIVERSITY   (Japan)

Author keywords

Hydride vapor phase epitaxy; InxGa1 xN; Nitride; Photoluminescence; Thin film; X ray diffraction

Indexed keywords

HYDRIDE VAPOR PHASE EPITAXY; INDIUM GALLIUM NITRIDE; PHOTOLUMINESCENCE SPECTRA;

EPITAXIAL GROWTH; HYDRIDES; NITRIDES; OPTICAL VARIABLES MEASUREMENT; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE; THIN FILMS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING FILMS;

EID: 0031190215     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4295     Document Type: Article

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