-
1
-
-
0026158174
-
-
R. F. Davis, G. Keiner, M. Shur, J. W. Palmour and J. A. Edmond, Proc. IEEE, 1991, 79, 677-701.
-
(1991)
Proc. IEEE
, vol.79
, pp. 677-701
-
-
Davis, R.F.1
Keiner, G.2
Shur, M.3
Palmour, J.W.4
Edmond, J.A.5
-
2
-
-
3342878077
-
-
S. Somiya and Y. Inomata (eds.), Elsevier, Amsterdam
-
T. Hirai and M. Sasaki, in S. Somiya and Y. Inomata (eds.), Silicon Carbide Ceramics - 1, Elsevier, Amsterdam, 1991, pp. 87-95.
-
(1991)
Silicon Carbide Ceramics - 1
, pp. 87-95
-
-
Hirai, T.1
Sasaki, M.2
-
4
-
-
0029698908
-
-
M. W. Russell, J. A. Freitas Jr., A. D. Berry and J. E. Butler, MRS Symp. Proc., 1995, 410, 351-356.
-
(1995)
MRS Symp. Proc.
, vol.410
, pp. 351-356
-
-
Russell, M.W.1
Freitas Jr., J.A.2
Berry, A.D.3
Butler, J.E.4
-
6
-
-
0030389580
-
-
M. W. Russell, J. A. Freitas Jr. and J. E. Butler, MRS Symp. Proc., 1996, 423, pp. 575-580.
-
(1996)
MRS Symp. Proc.
, vol.423
, pp. 575-580
-
-
Russell, M.W.1
Freitas Jr., J.A.2
Butler, J.E.3
-
9
-
-
36049056085
-
-
C. A. Arguello, D. L. Rousseau and S. P. S. Porto, Phys. Rev., 1969, 181, 1351-1363.
-
(1969)
Phys. Rev.
, vol.181
, pp. 1351-1363
-
-
Arguello, C.A.1
Rousseau, D.L.2
Porto, S.P.S.3
-
10
-
-
0040535475
-
-
G. L. Harris (ed.), INSPEC, London
-
J. A. Freitas Jr., in G. L. Harris (ed.), Properties of Silicon Carbide, INSPEC, London, 1995, p. 21.
-
(1995)
Properties of Silicon Carbide
, pp. 21
-
-
Freitas Jr., J.A.1
-
11
-
-
8744241933
-
-
H. Harima, S. Nakashima and Y. Uemura, J. Appl. Phys., 1995, 78, 1996-2005.
-
(1995)
J. Appl. Phys.
, vol.78
, pp. 1996-2005
-
-
Harima, H.1
Nakashima, S.2
Uemura, Y.3
-
14
-
-
3342918005
-
-
R. Ueda and J. B. Mullin (eds.), North-Holland, Amsterdam
-
S. B. Austerman, in R. Ueda and J. B. Mullin (eds.), Crystal Growth and Characterization, North-Holland, Amsterdam, 1975, pp. 243-254.
-
(1975)
Crystal Growth and Characterization
, pp. 243-254
-
-
Austerman, S.B.1
-
17
-
-
0346922857
-
-
F. Levy (ed.), Reidel, Boston, MA
-
G. C. Trigunayat and A. R. Verma, in F. Levy (ed.), Crystallography and Crystal Chemistry of Materials with Layered Structures, Reidel, Boston, MA, 1976, pp. 269-340.
-
(1976)
Crystallography and Crystal Chemistry of Materials with Layered Structures
, pp. 269-340
-
-
Trigunayat, G.C.1
Verma, A.R.2
-
18
-
-
0003896650
-
-
Y. M. Tarirov and Y. A. Vodakov (eds.), Y. M. Tarirov and Y. A. Vodakov (eds.), LIYa. Ph., Leningrad
-
Y. N. Mokhov, Y. A. Vodakov and G. I. Lomakina, in Y. M. Tarirov and Y. A. Vodakov (eds.), Problems of Physics and Technology of Wide-Bandgap Semiconductors, Y. M. Tarirov and Y. A. Vodakov (eds.), LIYa. Ph., Leningrad, 1979.
-
(1979)
Problems of Physics and Technology of Wide-Bandgap Semiconductors
-
-
Mokhov, Y.N.1
Vodakov, Y.A.2
Lomakina, G.I.3
-
19
-
-
0021589161
-
-
Springer, New York
-
Y. Tairov and V. Tsvetkov, in Crystals: Growth, Properties, and Applications, Vol. 10, Springer, New York, 1984, pp. 1-36.
-
(1984)
Crystals: Growth, Properties, and Applications
, vol.10
, pp. 1-36
-
-
Tairov, Y.1
Tsvetkov, V.2
-
20
-
-
0023560629
-
-
D. J. Cheng, W. J. Shyy, D. H. Kuo and M. H. Hon, J. Electrochem. Soc., 1987, 134, 3145-3149.
-
(1987)
J. Electrochem. Soc.
, vol.134
, pp. 3145-3149
-
-
Cheng, D.J.1
Shyy, W.J.2
Kuo, D.H.3
Hon, M.H.4
-
24
-
-
0016332635
-
-
University of South Carolina Press, Columbia, South Carolina
-
B. Wessels, H. C. Gatos and A. F. Witt, Proc. 3rd Int. Conf. on Silicon Carbide, 1973. University of South Carolina Press, Columbia, South Carolina, pp. 25-32.
-
(1973)
Proc. 3rd Int. Conf. on Silicon Carbide
, pp. 25-32
-
-
Wessels, B.1
Gatos, H.C.2
Witt, A.F.3
-
25
-
-
2142836248
-
-
D. W. Feldman, J. H. Parker Jr., W. J. Choyke and L. Patrick, Phys. Rev., 1968, 173, 787-793.
-
(1968)
Phys. Rev.
, vol.173
, pp. 787-793
-
-
Feldman, D.W.1
Parker Jr., J.H.2
Choyke, W.J.3
Patrick, L.4
-
26
-
-
0000615173
-
-
W. J. Choyke, Z. C. Feng and J. A. Powell, J. Appl. Phys., 1988, 64, 3163-3175.
-
(1988)
J. Appl. Phys.
, vol.64
, pp. 3163-3175
-
-
Choyke, W.J.1
Feng, Z.C.2
Powell, J.A.3
-
28
-
-
0022326484
-
-
J. A. Freitas Jr., S. G. Bishop, A. Addamiano, P. H. Klein, H. J. Kim and R. F. Davis, MRS Symp. Proc., 1985, 46, 581-586.
-
(1985)
MRS Symp. Proc.
, vol.46
, pp. 581-586
-
-
Freitas Jr., J.A.1
Bishop, S.G.2
Addamiano, A.3
Klein, P.H.4
Kim, H.J.5
Davis, R.F.6
-
29
-
-
0039350352
-
-
J. A. Freitas Jr., S. G. Bishop, P. E. R. Nordquist Jr. and M. L. Gipe, Appl. Phys. Lett., 1988, 52, 1695.
-
(1988)
Appl. Phys. Lett.
, vol.52
, pp. 1695
-
-
Freitas Jr., J.A.1
Bishop, S.G.2
Nordquist Jr., P.E.R.3
Gipe, M.L.4
-
32
-
-
0039604392
-
-
Springer, Berlin
-
S. G. Bishop, J. A. Freitas Jr., T. A. Kennedy, W. E. Carlos, W. J. Moore, P. E. R. Nordquist Jr. and M. L. Gipe, in Amorphous and Crystalline Silicon Carbide, Vol. 34, Springer, Berlin, 1989, pp. 90-98.
-
(1989)
Amorphous and Crystalline Silicon Carbide
, vol.34
, pp. 90-98
-
-
Bishop, S.G.1
Freitas Jr., J.A.2
Kennedy, T.A.3
Carlos, W.E.4
Moore, W.J.5
Nordquist Jr., P.E.R.6
Gipe, M.L.7
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