Local nanoscale photocurrent characterization of semiconductor interfaces by scanning tunneling microscopy

Electrochimica Acta

Volumn 42, Issue 19, 1997, Pages 2881-2888

  Hiesgen, R ^a   Meissner, D ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Photocurrent; Spatially resolved; STM; WSe2

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRIC CURRENT MEASUREMENT; INTERFACES (MATERIALS); PHOTOELECTRICITY; SCANNING TUNNELING MICROSCOPY; SCHOTTKY BARRIER DIODES; SHORT CIRCUIT CURRENTS; SURFACE STRUCTURE;

SEMICONDUCTING TUNGSTEN SELENIDE;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 0031187485     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0013-4686(97)00108-4     Document Type: Article

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