Origin of the n-type field effect in polyaniline and oligoaniline thin films

Synthetic Metals

Volumn 89, Issue 1, 1997, Pages 51-55

  Paloheimo, J ^a,b   Stubb, H ^a  

^a ÅBO AKADEMI UNIVERSITY   (Finland)

^b Okmetic Oyj   (Finland)

Author keywords

Coulomb gap; Field effect; Polyaniline and derivatives; Self assembly; Transistors; Variable range hopping

Indexed keywords

AROMATIC POLYMERS; DERIVATIVES; ELECTRIC FIELD EFFECTS; FERMI LEVEL; OLIGOMERS; PERMITTIVITY; SEMICONDUCTOR DOPING; THIN FILMS; TRANSISTORS;

COULOMB GAP; OLIGOANILINE; POLYANILINE; VARIABLE RANGE HOPPING;

PLASTIC FILMS;

EID: 0031185840     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0379-6779(97)81192-7     Document Type: Article

References (25)

1. Z.H. Wang, E.M. Scherr, A.G. MacDiarmid and A.J. Epstein, Phys. Rev. B, 45 (1992) 4190.
2. Reghu M., C.O. Yoon, D. Moses, A.J. Heeger and Y. Cao, Phys. Rev. B, 48 (1993) 17 685.
3. J. Paloheimo, K. Laakso, H. Isotalo and H. Stubb, Synth. Met., 68 (1995) 249.
4. P. Granholm, J. Paloheimo and H. Stubb, Phys. Scr., T69 (1997) 146; P. Granholm, J. Paloheimo and H. Stubb, Phys. Rev. B, in press.
5. P. Granholm, J. Paloheirao and H. Stubb, Phys. Scr., T69 (1997) 146; P. Granholm, J. Paloheimo and H. Stubb, Phys. Rev. B, in press.
6. J.H. Burroughes, C.A. Jones and R.H. Friend, Nature, 335 (1988) 137; A. Tsumura, H. Koezuka and T. Ando, Synth. Met., 25 (1988) 11; A. Assadi, C. Svensson, M. Willander and O. Inganäs, Appl. Phys. Lett., 53 (1988) 195; F. Garnier, G. Horowitz, X.Z. Peng and C. Fichou, Adv. Mater., 2 (1990) 592; J. Paloheimo, P. Kuivalainen, H. Stubb, E. Vuorimaa and P. Yli-Lahti, Appl. Phys. Lett., 56 (1990) 1157; E. Punkka, M.F. Rubner, J.D. Hettinger, J.S. Brooks and S.T. Hannahs, Phys. Rev. B, 43 (1991) 9076.
7. J.H. Burroughes, C.A. Jones and R.H. Friend, Nature, 335 (1988) 137; A. Tsumura, H. Koezuka and T. Ando, Synth. Met., 25 (1988) 11; A. Assadi, C. Svensson, M. Willander and O. Inganäs, Appl. Phys. Lett., 53 (1988) 195; F. Garnier, G. Horowitz, X.Z. Peng and C. Fichou, Adv. Mater., 2 (1990) 592; J. Paloheimo, P. Kuivalainen, H. Stubb, E. Vuorimaa and P. Yli-Lahti, Appl. Phys. Lett., 56 (1990) 1157; E. Punkka, M.F. Rubner, J.D. Hettinger, J.S. Brooks and S.T. Hannahs, Phys. Rev. B, 43 (1991) 9076.
8. J.H. Burroughes, C.A. Jones and R.H. Friend, Nature, 335 (1988) 137; A. Tsumura, H. Koezuka and T. Ando, Synth. Met., 25 (1988) 11; A. Assadi, C. Svensson, M. Willander and O. Inganäs, Appl. Phys. Lett., 53 (1988) 195; F. Garnier, G. Horowitz, X.Z. Peng and C. Fichou, Adv. Mater., 2 (1990) 592; J. Paloheimo, P. Kuivalainen, H. Stubb, E. Vuorimaa and P. Yli-Lahti, Appl. Phys. Lett., 56 (1990) 1157; E. Punkka, M.F. Rubner, J.D. Hettinger, J.S. Brooks and S.T. Hannahs, Phys. Rev. B, 43 (1991) 9076.
9. J.H. Burroughes, C.A. Jones and R.H. Friend, Nature, 335 (1988) 137; A. Tsumura, H. Koezuka and T. Ando, Synth. Met., 25 (1988) 11; A. Assadi, C. Svensson, M. Willander and O. Inganäs, Appl. Phys. Lett., 53 (1988) 195; F. Garnier, G. Horowitz, X.Z. Peng and C. Fichou, Adv. Mater., 2 (1990) 592; J. Paloheimo, P. Kuivalainen, H. Stubb, E. Vuorimaa and P. Yli-Lahti, Appl. Phys. Lett., 56 (1990) 1157; E. Punkka, M.F. Rubner, J.D. Hettinger, J.S. Brooks and S.T. Hannahs, Phys. Rev. B, 43 (1991) 9076.
10. J.H. Burroughes, C.A. Jones and R.H. Friend, Nature, 335 (1988) 137; A. Tsumura, H. Koezuka and T. Ando, Synth. Met., 25 (1988) 11; A. Assadi, C. Svensson, M. Willander and O. Inganäs, Appl. Phys. Lett., 53 (1988) 195; F. Garnier, G. Horowitz, X.Z. Peng and C. Fichou, Adv. Mater., 2 (1990) 592; J. Paloheimo, P. Kuivalainen, H. Stubb, E. Vuorimaa and P. Yli-Lahti, Appl. Phys. Lett., 56 (1990) 1157; E. Punkka, M.F. Rubner, J.D. Hettinger, J.S. Brooks and S.T. Hannahs, Phys. Rev. B, 43 (1991) 9076.
11. J.H. Burroughes, C.A. Jones and R.H. Friend, Nature, 335 (1988) 137; A. Tsumura, H. Koezuka and T. Ando, Synth. Met., 25 (1988) 11; A. Assadi, C. Svensson, M. Willander and O. Inganäs, Appl. Phys. Lett., 53 (1988) 195; F. Garnier, G. Horowitz, X.Z. Peng and C. Fichou, Adv. Mater., 2 (1990) 592; J. Paloheimo, P. Kuivalainen, H. Stubb, E. Vuorimaa and P. Yli-Lahti, Appl. Phys. Lett., 56 (1990) 1157; E. Punkka, M.F. Rubner, J.D. Hettinger, J.S. Brooks and S.T. Hannahs, Phys. Rev. B, 43 (1991) 9076.
12. E. Punkka, K. Laakso, H. Stubb, K. Levon and W.-Y. Zheng, Thin Solid Films, 243 (1994) 515.
13. G. Horowitz, F. Kouki, P. Spearman, D. Fichou, C. Nogues, X. Pan and F. Garnier, Adv. Mater., 8 (1996) 242.
14. A.L. Efros and B.I. Shklovskii, J. Phys. C: Solid State Phys., 8 (1975) L49.
15. J.C. Dawson and C.J. Adkins, J. Phys.: Condens. Matter, 7 (1995) 6297.
16. J.H. Cheung, A.F. Fou and M.F. Rubner, Thin Solid Films, 244 (1994) 985.
17. J. Paloheimo, A.J. Pal and H. Stubb, J. Appl. Phys., 79 (1996) 7800.
18. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1969.
19. N.F. Mott and E.A. Davis, Electronic Processes in Non-Crystalline Materials, Clarendon Press, Oxford, 1979.
20. H.H.S. Javadi, K.R. Cromack, A.G. MacDiarmid and A.J. Epstein, Phys. Rev. B, 39 (1989) 3579; Reghu M., Y. Cao, D. Moses and A.J. Heeger, Synth. Met., 55-57 (1993) 5020; P.K. Kahol, V. Pendse, N.J. Pinto, M. Traore, W.T.K. Stevenson, B.J. McCormick and J.N. Gunderson, Phys. Rev. B, 50 (1994) 2809.
21. H.H.S. Javadi, K.R. Cromack, A.G. MacDiarmid and A.J. Epstein, Phys. Rev. B, 39 (1989) 3579; Reghu M., Y. Cao, D. Moses and A.J. Heeger, Synth. Met., 55-57 (1993) 5020; P.K. Kahol, V. Pendse, N.J. Pinto, M. Traore, W.T.K. Stevenson, B.J. McCormick and J.N. Gunderson, Phys. Rev. B, 50 (1994) 2809.
22. H.H.S. Javadi, K.R. Cromack, A.G. MacDiarmid and A.J. Epstein, Phys. Rev. B, 39 (1989) 3579; Reghu M., Y. Cao, D. Moses and A.J. Heeger, Synth. Met., 55-57 (1993) 5020; P.K. Kahol, V. Pendse, N.J. Pinto, M. Traore, W.T.K. Stevenson, B.J. McCormick and J.N. Gunderson, Phys. Rev. B, 50 (1994) 2809.
23. O. Entin-Wohlman, Y. Gefen and Y. Shapira, J. Phys. C: Solid State Phys., 16 (1983) 1161.
24. I.P. Zvyagin, J. Non-Cryst. Solids, 90 (1987) 17.
25. J. Libert, J.L. Brédas and A.J. Epstein, Phys. Rev. B, 51 (1995) 5711.