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Volumn 9, Issue 7, 1997, Pages 889-891

Thermal behavior of tensile-strain InGaAsP-InP lasers with varying ridgewidth

Author keywords

Laser heating; Quantum well; Ridge waveguide; Semiconductor laser; Strain

Indexed keywords

CONTINUOUS WAVE LASERS; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES; TENSILE PROPERTIES; THERMAL EFFECTS;

EID: 0031185336     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.593335     Document Type: Article
Times cited : (4)

References (12)
  • 1
    • 0019045269 scopus 로고
    • Temperature characteristics of threshold current in InGaAsP/InP double-heterostructure lasers
    • M. Yano, H. Nishi, and M. Takusagawa, "Temperature characteristics of threshold current in InGaAsP/InP double-heterostructure lasers," J. Appl. Phys., vol. 51, pp. 4022-4028, 1980.
    • (1980) J. Appl. Phys. , vol.51 , pp. 4022-4028
    • Yano, M.1    Nishi, H.2    Takusagawa, M.3
  • 2
    • 0019567903 scopus 로고
    • Stationary and transient thermal properties of semiconductor laser diode
    • M. Ito and T. Kimura, "Stationary and transient thermal properties of semiconductor laser diode," IEEE J. Quantum Electron., vol. QE-17, pp. 787-795, 1981.
    • (1981) IEEE J. Quantum Electron. , vol.QE-17 , pp. 787-795
    • Ito, M.1    Kimura, T.2
  • 3
    • 0024754185 scopus 로고
    • Maximum heat-sink temperature for CW operation of a double-heterostructure semiconductor injection laser
    • H. C. Hsieh, "Maximum heat-sink temperature for CW operation of a double-heterostructure semiconductor injection laser," IEEE J. Quantum Electron., vol. 25, pp. 2079-2083, 1989.
    • (1989) IEEE J. Quantum Electron. , vol.25 , pp. 2079-2083
    • Hsieh, H.C.1
  • 4
    • 0026173725 scopus 로고
    • Very high-power (425mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41mW at 428nm)
    • H. Jaeckel, G. Bona, P. Buchmann, H. Meier, P. Vettiger, W. Kozlovsky, and W. Lenth, "Very high-power (425mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41mW at 428nm)," IEEE J. Quantum Electron., vol. 27, pp. 1560-1588, 1991.
    • (1991) IEEE J. Quantum Electron. , vol.27 , pp. 1560-1588
    • Jaeckel, H.1    Bona, G.2    Buchmann, P.3    Meier, H.4    Vettiger, P.5    Kozlovsky, W.6    Lenth, W.7
  • 5
    • 0026953306 scopus 로고
    • Thermal behavior of visible Al-GaInP-GaInP ridge laser diodes
    • O. Martin, G. Bona, and P. Wolf, "Thermal behavior of visible Al-GaInP-GaInP ridge laser diodes," IEEE J. Quantum Electron., vol. 28, pp. 2582-2588, 1992.
    • (1992) IEEE J. Quantum Electron. , vol.28 , pp. 2582-2588
    • Martin, O.1    Bona, G.2    Wolf, P.3
  • 6
    • 0001565701 scopus 로고    scopus 로고
    • Steady state model for facet heating leading to thermal runaway in semiconductor lasers
    • R. Schatz and C. G. Bethea, "Steady state model for facet heating leading to thermal runaway in semiconductor lasers," J. Appl. Phys., vol. 76, pp. 2509-2521.
    • J. Appl. Phys. , vol.76 , pp. 2509-2521
    • Schatz, R.1    Bethea, C.G.2
  • 7
    • 0030214353 scopus 로고    scopus 로고
    • High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy
    • P. Savolainen, M. Toivonen, H. Asonen, M. Pessa, and R. Murison, "High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy," IEEE Photon. Technol. Lett., vol. 8, pp. 986-988, 1996.
    • (1996) IEEE Photon. Technol. Lett. , vol.8 , pp. 986-988
    • Savolainen, P.1    Toivonen, M.2    Asonen, H.3    Pessa, M.4    Murison, R.5
  • 9
    • 0019562970 scopus 로고
    • Thermal impedance of diode lasers: Comparison of experimental methods and a theoretical model
    • J. S. Manning, "Thermal impedance of diode lasers: Comparison of experimental methods and a theoretical model," J. Appl. Phys., vol. 52, pp. 3179-3184, 1981.
    • (1981) J. Appl. Phys. , vol.52 , pp. 3179-3184
    • Manning, J.S.1
  • 10
    • 0031185331 scopus 로고    scopus 로고
    • A relationship for temperature dependence of threshold current for 1.3μm compressively strained-layer multiple quantum well lasers
    • submitted and accepted subject to minor revisions
    • R. Huang, J. G. Simmons, and P. E. Jessop, "A relationship for temperature dependence of threshold current for 1.3μm compressively strained-layer multiple quantum well lasers," IEEE Photon. Technol. Lett., submitted and accepted subject to minor revisions.
    • IEEE Photon. Technol. Lett.
    • Huang, R.1    Simmons, J.G.2    Jessop, P.E.3
  • 12
    • 3843078544 scopus 로고
    • Calculation of the temperature distribution in ridge-waveguide laser diodes
    • J. Piprek and R. Nurnberg, "Calculation of the temperature distribution in ridge-waveguide laser diodes," Sov. J. Quantum Electron., vol. 18. pp. 1408-1410, 1989.
    • (1989) Sov. J. Quantum Electron. , vol.18 , pp. 1408-1410
    • Piprek, J.1    Nurnberg, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.