-
1
-
-
0019045269
-
Temperature characteristics of threshold current in InGaAsP/InP double-heterostructure lasers
-
M. Yano, H. Nishi, and M. Takusagawa, "Temperature characteristics of threshold current in InGaAsP/InP double-heterostructure lasers," J. Appl. Phys., vol. 51, pp. 4022-4028, 1980.
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 4022-4028
-
-
Yano, M.1
Nishi, H.2
Takusagawa, M.3
-
2
-
-
0019567903
-
Stationary and transient thermal properties of semiconductor laser diode
-
M. Ito and T. Kimura, "Stationary and transient thermal properties of semiconductor laser diode," IEEE J. Quantum Electron., vol. QE-17, pp. 787-795, 1981.
-
(1981)
IEEE J. Quantum Electron.
, vol.QE-17
, pp. 787-795
-
-
Ito, M.1
Kimura, T.2
-
3
-
-
0024754185
-
Maximum heat-sink temperature for CW operation of a double-heterostructure semiconductor injection laser
-
H. C. Hsieh, "Maximum heat-sink temperature for CW operation of a double-heterostructure semiconductor injection laser," IEEE J. Quantum Electron., vol. 25, pp. 2079-2083, 1989.
-
(1989)
IEEE J. Quantum Electron.
, vol.25
, pp. 2079-2083
-
-
Hsieh, H.C.1
-
4
-
-
0026173725
-
Very high-power (425mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41mW at 428nm)
-
H. Jaeckel, G. Bona, P. Buchmann, H. Meier, P. Vettiger, W. Kozlovsky, and W. Lenth, "Very high-power (425mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41mW at 428nm)," IEEE J. Quantum Electron., vol. 27, pp. 1560-1588, 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 1560-1588
-
-
Jaeckel, H.1
Bona, G.2
Buchmann, P.3
Meier, H.4
Vettiger, P.5
Kozlovsky, W.6
Lenth, W.7
-
5
-
-
0026953306
-
Thermal behavior of visible Al-GaInP-GaInP ridge laser diodes
-
O. Martin, G. Bona, and P. Wolf, "Thermal behavior of visible Al-GaInP-GaInP ridge laser diodes," IEEE J. Quantum Electron., vol. 28, pp. 2582-2588, 1992.
-
(1992)
IEEE J. Quantum Electron.
, vol.28
, pp. 2582-2588
-
-
Martin, O.1
Bona, G.2
Wolf, P.3
-
6
-
-
0001565701
-
Steady state model for facet heating leading to thermal runaway in semiconductor lasers
-
R. Schatz and C. G. Bethea, "Steady state model for facet heating leading to thermal runaway in semiconductor lasers," J. Appl. Phys., vol. 76, pp. 2509-2521.
-
J. Appl. Phys.
, vol.76
, pp. 2509-2521
-
-
Schatz, R.1
Bethea, C.G.2
-
7
-
-
0030214353
-
High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy
-
P. Savolainen, M. Toivonen, H. Asonen, M. Pessa, and R. Murison, "High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy," IEEE Photon. Technol. Lett., vol. 8, pp. 986-988, 1996.
-
(1996)
IEEE Photon. Technol. Lett.
, vol.8
, pp. 986-988
-
-
Savolainen, P.1
Toivonen, M.2
Asonen, H.3
Pessa, M.4
Murison, R.5
-
8
-
-
0000988266
-
High temperature characteristics of InGaAsP/InP laser structures
-
H. Temkin, D. Coblentz, R. A. Logan, J. van der Ziel, T. Tanbun-Ek, R. D. Yadvish, and A. M. Sergent, "High temperature characteristics of InGaAsP/InP laser structures," Appl. Phys. Lett., vol. 62, pp. 2402-2404, 1993.
-
(1993)
Appl. Phys. Lett.
, vol.62
, pp. 2402-2404
-
-
Temkin, H.1
Coblentz, D.2
Logan, R.A.3
Van Der Ziel, J.4
Tanbun-Ek, T.5
Yadvish, R.D.6
Sergent, A.M.7
-
9
-
-
0019562970
-
Thermal impedance of diode lasers: Comparison of experimental methods and a theoretical model
-
J. S. Manning, "Thermal impedance of diode lasers: Comparison of experimental methods and a theoretical model," J. Appl. Phys., vol. 52, pp. 3179-3184, 1981.
-
(1981)
J. Appl. Phys.
, vol.52
, pp. 3179-3184
-
-
Manning, J.S.1
-
10
-
-
0031185331
-
A relationship for temperature dependence of threshold current for 1.3μm compressively strained-layer multiple quantum well lasers
-
submitted and accepted subject to minor revisions
-
R. Huang, J. G. Simmons, and P. E. Jessop, "A relationship for temperature dependence of threshold current for 1.3μm compressively strained-layer multiple quantum well lasers," IEEE Photon. Technol. Lett., submitted and accepted subject to minor revisions.
-
IEEE Photon. Technol. Lett.
-
-
Huang, R.1
Simmons, J.G.2
Jessop, P.E.3
-
11
-
-
3843120948
-
-
R. Huang, "Study of temperature characteristics of 1.3μm strain-layer multiple quantum well lasers," Ph.D. dissertation, McMaster Univ., Hamilton, ON, Canada, 1997.
-
(1997)
Study of Temperature Characteristics of 1.3μm Strain-layer Multiple Quantum Well LasersPh.D. Dissertation, McMaster Univ., Hamilton, ON, Canada
-
-
Huang, R.1
-
12
-
-
3843078544
-
Calculation of the temperature distribution in ridge-waveguide laser diodes
-
J. Piprek and R. Nurnberg, "Calculation of the temperature distribution in ridge-waveguide laser diodes," Sov. J. Quantum Electron., vol. 18. pp. 1408-1410, 1989.
-
(1989)
Sov. J. Quantum Electron.
, vol.18
, pp. 1408-1410
-
-
Piprek, J.1
Nurnberg, R.2
|