Influence of size factors in the electroluminescent emission of large area GaAs IRED's

IEEE Transactions on Electron Devices

Volumn 44, Issue 7, 1997, Pages 1174-1176

  Reyna, Rosa F ^a   Marti, Antonio ^a   Algora, Carlos ^a   Maroto, Juan C ^a   Araüjo, Gerardo L ^a  

^a I E S   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES;

INFRARED EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0031177475     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.595948     Document Type: Article

References (8)

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2. A. M. Kontkiewicz, "The influence of design factors on the radiation power of GaAs:Si LED's," Electron Technol. , vol. 13, no. 4, pp. 81-96, 1982.
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5. Y. Ono, M. Mori, K. Ito, and K. Kurata, "High-power and highspeed characteristics of modified heterostructure IRED's," IEEE Trans. Electron Devices, vol. ED-28, pp. 1183-1187, Oct. 1981.
6. W. N. Carr and G. E. Pittman, "One-watt GaAs p-n junction infrared source," Appl. Phys. Lett. , vol. 3, no. 10, pp. 173-175, Nov. 1963.
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8. G. E. Araüjo, A. Cuevas, and J. M. Ruiz, "The effect of distributed series resistance on the dark and illuminated current-voltage characteristics of solar cells," IEEE Trans. Electron Devices, vol. ED-33, pp. 391101, Mar. 1986.