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Volumn 28, Issue 4, 1981, Pages 374-379
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An Experimental Study on Improvement of Performance for Hemispherically Shaped High-Power IRED's with Ga1-xAlxAs Grown Junctions
a a a a a
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
SEMICONDUCTOR DIODES, LIGHT EMITTING;
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EID: 0019554783
PISSN: 00189383
EISSN: 15579646
Source Type: Journal
DOI: 10.1109/T-ED.1981.20349 Document Type: Article |
Times cited : (18)
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References (14)
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