Modeling Point-Defect Distribution in Dislocation-Free Si Crystals Grown from the Melt

Inorganic Materials

Volumn 32, Issue 1, 1996, Pages 1-9

  Puzanov, N I ^a  

^a Podolsk Chemical Metallurgical Plant   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039212591     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

1. Moody, J.W. and Frederick, R., Developments in Czochralski Silicon Crystal Growth, Solid State Technol., 1983, vol. 26, no. 8, pp. 221-225.
2. Abe, T., Silicon Crystals for Giga-Bit Scale Integration, Handbook on Semiconductors, Mahajan, S., Ed., Amsterdam: North Holland, 1994, vol. 3B.
3. Ravi, K. V., Imperfections and Impurities in Semiconductor Silicon, New York: Wiley, 1981.
4. De Kock, AJ..R., Microdefects in Dislocation-Free Silicon, Philips Res. Rep., 1973, Suppl. no. 1, pp. 1 - 105.
5. Puzanov, N.I., Eidenzon, A.M., and Rogovoi, V.I., Influence of Growth Conditions on the Formation of Microdefects in Dislocation-Free Silicon, Kristallografiya, 1989, vol. 34, no. 2, pp. 461-469.
6. Puzanov, N.I. and Eidenzon, A.M., The Effect of Thermal History during Crystal Growth on Oxygen Precipitation in CZ-Grown Silicon, Semicond. Sci. Technol., 1992, vol. 7, pp. 406-413.
7. Petroff, P.M. and De Kock, A.J.R., Characterization of Swirl Defects in Float-Zone Silicon Crystals, J. Cryst. Growth, 1975, vol. 30, no. 1, pp. 117-124.
8. Chikawa, J.-I., Swirl Defects in Silicon Single Crystals, NHK Lab. Notes, 1979, no. 232, pp. 1-12.
9. Roksnoer, PJ., The Mechanism of Formation of Microdefects in Silicon, J. Cryst. Growth, 1984, vol. 68, no. 2, pp. 596-612.
10. Eidenzon, A.M. and Puzanov, N.I., Influence of Pulling Rate on Swirl Defects in Large-Size Dislocation-Free Si Crystals Grown by the Czochralski Technique, Kristallografiya, 1985, vol. 30, no. 5, pp. 992-998.
11. Voronkov, V.V., The Mechanism of Swirl-Defect Formation in Silicon Crystals, J. Cryst. Growth, 1982, vol. 69, no. 3, pp. 625-643.
12. Puzanov, N.I. and Eidenzon, A.M., Relaxation in the Point-Defect System of Growing Dislocation-Free Silicon Crystals, Kristallografiya, 1986, vol. 31, no. 2, pp. 373-379.
13. Fahey, P.M., Griffin, P.B., and Plummer, J.D., Point Defects and Dopant Diffusion in Silicon, Rev. Mod. Phys., 1989, vol. 61, pp. 289-384.
14. Foell, H. and Kolbesen, B.O., Formation and Nature of Swirl Defects in Silicon, Appl. Phys., 1975, vol. 8, no. 4, pp. 319-331.
15. Roksnoer, P.I. and van den Boom, M.M.B., Microdefects in a Non-Striated Distribution in Floating-Zone Silicon Crystals, J. Cryst. Growth, 1981, vol. 53, no. 4, pp. 563-573.
16. Voronkov, V.V., Formation of Grown-In Microdefects in Dislocation-Free Silicon, Silicon 90, Rožnov, 1990, vol. 2, pp. 1-10.
17. Puzanov, N.I. and Eidenzon, A.M., Formation of the Bands of Anomalous Oxygen Precipitation in Czochralski-Grown Si Crystals, J. Cryst Growth, 1994, vol. 137, pp. 642-652.