Simulation of plasma production and chemical reaction in an oxide deposition apparatus using electron cyclotron resonance plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 SUPPL. B, 1997, Pages 4769-4772

  Morimoto, Tamotsu ^b   Yasaka, Yasuyoshi ^a   Tozawa, Masaki ^b   Akahori, Takashi ^b   Amano, Hideaki ^b   Ishii, Nobuo ^b  

^a KYOTO UNIVERSITY   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

ECR plasma; Fluid model; Gas phase reaction; Oxide deposition; Two dimensional simulation

Indexed keywords

ARGON; COMPUTER SIMULATION; COMPUTER SOFTWARE; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; FLUORINE COMPOUNDS; MIXTURES; OXYGEN; PLASMA DENSITY; SILANES; TRANSPORT PROPERTIES;

FLUID MODEL; GAS PHASE REACTIONS;

PLASMA THEORY;

EID: 0031176697     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4769     Document Type: Article

References (7)

1. Y. Yasaka, A. Fukuyama, A. Hatta and R. Itatani: J. Appl. Phys. 72 (1992) 2652.
2. R. Porteous, H.-M. Wu and D. Graves: Plasma Souces Sci. Technol. 3 (1994) 25.
3. M. Kushner: J. Appl. Phys. 63 (1988) 2532.
4. M. Kushner: J. Appl. Phys. 74 (1993) 6538.
5. T. Nakano and H. Sugai: J. Phys. D: Appl. Phys. 26 (1993) 1909.
6. Y. Itikawa, A. Ichimura, K. Onda, K. Sakimoto, K. Takayanagi, Y. Hatano, M. Hayashi, H. Nishimura and S. Tsurubuchi: J. Phys. Chem. Ref. Data 18 (1989) 23.
7. S. Han and E. Aydil: J. Vac. Sci. Technol. A14 (1996) 2062.