Analytical charge control model for GaAs/AlGaAs-based multiple-quantum-well power HEMTs

Microwave and Optical Technology Letters

Volumn 11, Issue 1, 1996, Pages 1-8

  Nawaz, M ^a   Jensen, Geir U ^b  

^a Centre for Technology at Kjeller (UNIK)   (Norway)

^b TELENOR RESEARCH   (Norway)

Author keywords

Device modeling; HEMT; Multichannel HEMT; Power device

Indexed keywords

CALCULATIONS; ELECTRIC CHARGE; ELECTRIC VARIABLES CONTROL; FERMI LEVEL; HETEROJUNCTIONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MICROWAVE CIRCUITS; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

CHARGE DENSITY; POISSON EQUATIONS; SCHRODINGER EQUATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029777042     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2760(199601)11:1<1::AID-MOP1>3.0.CO;2-Q     Document Type: Article

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