Photosensitivity of Ge-doped silica deposited by hollow cathode PECVD

Electronics Letters

Volumn 32, Issue 13, 1996, Pages 1198-1199

  Bazylenko, M V ^a   Gross, M ^a   Chu, P L ^a   Moss, D ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

Author keywords

Chemical vapour deposition; Optical waveguides; Thin film devices

Indexed keywords

GERMANOSILICATE WAVEGUIDE MATERIAL; PHOTONIC INTEGRATED CIRCUITS; SILICA WAVEGUIDES;

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; OPTICAL WAVEGUIDES; PHOTOSENSITIVE GLASS; PHOTOSENSITIVITY; SILICA; THIN FILM DEVICES;

OPTICAL FILMS;

EID: 0030168886     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960791     Document Type: Article

References (7)

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4. GRAND, G., JADOT, J.P., DANIS, H., VALETTE, S., FOURNIER, A., and GROUILLET, A. M.: 'Low-loss PECVD silica channel waveguides for optical communications', Electron. Lett., 1990, 26, (25), pp. 2135-2137
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