UV-deposited silicon nitride coupled with XeF2 surface cleaning for III-V optoelectronic device passivation

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 69-72

  How Kee Chun, L S ^a   Courant, J L ^a   Falcou, A ^a   Ossart, P ^a   Post, G ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; FLUORINE COMPOUNDS; PASSIVATION; PHOTODIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON NITRIDE; SURFACE CLEANING; ULTRAVIOLET RADIATION;

ULTRAVIOLET CHEMICAL VAPOR DEPOSITION (UVCVD); XENON DIFLUORIDE; ULTRAVIOLET ENHANCED CHEMICAL VAPOR DEPOSITION;

OPTOELECTRONIC DEVICES;

EID: 0031168678     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00017-8     Document Type: Article

References (10)

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