In-situ surface preparation of InP-based semiconductors prior to direct UVCVD silicon nitride deposition for passivation purposes

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 412-415

  How Kee Chun, L S ^a   Courant, J L ^a   Ossart, P ^a   Post, G ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; SURFACE TREATMENT;

ULTRAVIOLET CHEMICAL VAPOR DEPOSITION (UVCVD);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0029724249     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)