Depth profiling using total reflection X-ray fluorescence spectrometry alone and in combination with ion beam sputtering

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 52, Issue 7, 1997, Pages 795-803

  Schwenke, H ^a   Knoth, J ^a   Gunther R ^a   Wiener, G ^a   Bormann, R ^a  

^a INSTITUTE OF MATERIALS RESEARCH   (Germany)

Author keywords

Depth profiling; Ion beam sputtering; Surface analysis; Total reflection X ray fluoresence spectrometry

Indexed keywords

ARSENIC; COBALT; ETCHING; FLUORESCENCE; INTERFACES (MATERIALS); ION BEAMS; ION IMPLANTATION; NICKEL; ORGANOMETALLICS; SILICON WAFERS; SPUTTER DEPOSITION; SURFACE STRUCTURE;

DEPTH PROFILING; ION BEAM SPUTTERING; SURFACE ANALYSIS; TOTAL REFLECTION X RAY FLUORESCENCE SPECTROMETRY (TXRF);

X RAY SPECTROSCOPY;

EID: 0031168109     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0584-8547(96)01647-3     Document Type: Article

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