Discrete Schottky barriers observed for the metal/n-ZnSet(100) system

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 727-731

  Blomfield, C J ^a   Dharmadasa, I M ^a   Prior, K A ^b   Cavenett, B C ^b  

^a SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

^b HERIOT WATT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ANTIMONY; ETCHING; FERMI LEVEL; GOLD; METALS; MOLECULAR BEAM EPITAXY; POINT CONTACTS; POINT DEFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SILVER;

BARRIER HEIGHTS; NATIVE DEFECTS; PINNING;

SCHOTTKY BARRIER DIODES;

EID: 0030562442     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00648-6     Document Type: Article

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