Large grained polycrystalline silicon films by solid phase crystallization of phosphorus-doped amorphous silicon

Journal of Crystal Growth

Volumn 177, Issue 3-4, 1997, Pages 191-195

  Bergmann, Ralf B ^a   Krinke, Jörg ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Grain growth; Si; Solid phase crystallization; TEM

Indexed keywords

AMORPHOUS SILICON; COMPOSITION EFFECTS; CRYSTALLIZATION; GLASS; GRAIN GROWTH; GRAIN SIZE AND SHAPE; HALL EFFECT; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

SOLID PHASE CRYSTALLIZATION;

SEMICONDUCTING FILMS;

EID: 0031163981     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01117-7     Document Type: Article

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