1.3-μm InP-InGaAsP lasers fabricated on Si substrates by wafer bonding

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 937-942

  Wada, Hiroshi ^a,b   Kamijoh, Takeshi ^a,b  

^a IEEE   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH (MATERIALS); BONDING; ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS; THIN FILMS;

WAFER BONDING;

SEMICONDUCTOR LASERS;

EID: 0031153806     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640647     Document Type: Article

References (18)

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