Generation of hole traps in silicon dioxide under Fowler-Nordheim stress

Materials Research Society Symposium - Proceedings

Volumn 428, Issue , 1996, Pages 317-322

  Brozek, T ^a   Chan, Y D ^a   Viswanathan, C R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON TUNNELING; INTERFACES (MATERIALS); METALLIZING; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICA; STRESS RELAXATION;

FOWLER-NORDHEIM STRESS; HOLE TRAPS GENERATION;

SEMICONDUCTING FILMS;

EID: 0030411094     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-428-317     Document Type: Conference Paper

References (31)