Growth-mode-induced surface morphology and its relation to optical properties of GaAs single quantum wells

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1167-1172

  Hey, R ^a   Gorbunova, I ^a   Ramsteiner, M ^a   Wassermeier, M ^a   Daweritz L ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

AlAs GaAs; Molecular beam epitaxy; Quantum wells; Superlattices

Indexed keywords

ATOMIC FORCE MICROSCOPY; EXCITONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SURFACE ROUGHNESS;

ALUMINUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031147614     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01039-1     Document Type: Article

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