Single ion impacts on an In0.22Ga0.78 As/GaAs(100) surface observed by atomic force microscopy

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 124, Issue 4, 1997, Pages 500-505

  Wilson, I H ^a   Chen, Y J ^a   Xu, J B ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; IONS; METALLORGANIC VAPOR PHASE EPITAXY; SPUTTERING; SURFACES; TRANSPORT PROPERTIES;

CRATERS; ION DOSE; SCANNING PROBE MICROSCOPY; SINGLE ION IMPACTS; SURFACE MASS TRANSPORT;

ION BOMBARDMENT;

EID: 0031147040     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00141-9     Document Type: Article

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