Large array of GaAs modulators and detectors flip-chip solder bonded to silicon CMOS using InGaP as the selective etch stop for GaAs substrate removal

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 971-976

  Kuo, J M ^a   Wang, Y C ^a,c   Goossen, K W ^a   Chirovsky, L M F ^a   Huia, S P ^a   Tseng, B T ^a   Walker, J ^a   Lentine, A L ^a   Leibenguth, R E ^a   Livescu, G ^a   Jan, W Y ^a   Cunningham, J E ^a   D'Asaro, L A ^a   Ron, A ^a,b   Dahringer, D ^a   Kossives, D ^a   Bacon, D D ^a   Morrison, R L ^a   Novotny, R A ^a   Buchholz, D B ^a   Mayo, W E ^c   more..

^a LUCENT TECHNOLOGIES   (United States)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^c RUTGERS UNIVERSITY   (United States)

Author keywords

Flip chip solder bonding; InGaP; Modulation detector array

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL LATTICES; ETCHING; FLIP CHIP DEVICES; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SOLDERING; SUBSTRATES;

FLIP CHIP SOLDER BUMP BONDING; LATTICE MATCHING; SELECTIVE ETCH STOP METHOD;

SEMICONDUCTOR DIODES;

EID: 0031146254     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01206-7     Document Type: Article

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