Comments on "on the base profile design and optimization of epitaxial si- and sige-base bipolar technology for 77 k applications - part ii: circuit performance issues"

IEEE Transactions on Electron Devices

Volumn 44, Issue 5, 1997, Pages 915-917

  Song, J ^a  

^a University of Central Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; EPITAXIAL GROWTH; FABRICATION; OPTIMIZATION; PERFORMANCE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; TRANSIT TIME DEVICES;

BASE TRANSIT TIME;

BIPOLAR TRANSISTORS;

EID: 0031145996     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.568062     Document Type: Article

References (1)

1. J. D. Cressler, J. H. Comfort, E. F. Crabbe, G. L. Patton, J. M.-C. Stork, J. Y.-C. Sun, and B. S. Meyerson, "On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications - Part I: Transistor dc design consideration," IEEE Trans. Electron Devices, vol. 40, pp. 525-542, 1993.