Self-organized quantum dot structures in strained (GaP)n(InP)m short period superlattices grown on GaAs (N 1 1) by gas-source MBE

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 754-759

  Kim, S J ^a   Asahi, H ^a   Takemoto, M ^a   Asami, K ^a   Noh, J H ^a   Gonda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

GaP InP superlattice; Gas source MBE; PL; Self organized quantum dot; STM; TEM

Indexed keywords

COMPOSITION EFFECTS; MOLECULAR BEAM EPITAXY; MULTILAYERS; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

FULL WIDTH AT HALF MAXIMUM (FWHM); GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTOR SUPERLATTICES;

EID: 0031145699     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01008-1     Document Type: Article

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