High temperature annealing of GaN, InN, AlN and related alloys

Solid-State Electronics

Volumn 41, Issue 5, 1997, Pages 681-694

  Hong, J ^a   Lee, J W ^a   Vartuli, C B ^a   Mackenzie, J D ^a   Donovan, S M ^a   Abernathy, C R ^a   Crockett, R V ^a   Pearton, S J ^a   Zolper, J C ^b   Ren, F ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONDENSATION; EVAPORATION; HIGH TEMPERATURE OPERATIONS; NITRIDES; SURFACE TREATMENT; TERNARY SYSTEMS;

TRANSIENT THERMAL PROCESSING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031145692     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00219-5     Document Type: Article

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